发明名称 |
Analog-to-digital conversion method and device, in high-density multilevel non-volatile memory devices |
摘要 |
An analog-to-digital conversion method and device for a multilevel non-volatile memory devicethat includes a multilevel memory cell. The method comprises a first step of converting the most significant bits contained in the memory cell, followed by a second step of converting the least significant bits. The first step is completed within a time interval corresponding to the rise transient of the gate voltage, and the second step is initiated at the end of the transient. Also disclosed is a scheme for error control coding in multilevel Flash memories. The n bits stored in a single memory cell are organized in different "bit-layers", which are independent from one another. Error correction is carried out separately for each bit-layer. The correction of any failure in a single memory cell is achieved by using a simple error control code providing single-bit correction, regardless of the number of bits stored in a single cell.
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申请公布号 |
US2002196171(A1) |
申请公布日期 |
2002.12.26 |
申请号 |
US20020060076 |
申请日期 |
2002.01.29 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
MICHELONI RINO;KHOURI OSAMA;PIERIN ANDREA;GREGORI STEFANO;TORELLI GUIDO |
分类号 |
G11C11/56;H03M1/14;H03M1/36;(IPC1-7):H03M1/14 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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