| 摘要 |
A method for trimming a non-volatile memory cell. One method comprising, erasing the memory cell below a desired voltage threshold (Vt) level, applying a program pulse to the memory cell, reading the memory cell, comparing a current conducted by the memory cell with an externally provided reference current using a sense amplifier that is internal to a memory device that contains the memory cell, producing a digital output based on the comparison of the currents and applying successive program pulses until the digital output changes from one logic state to another.
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