发明名称 |
High speed stripping for damaged photoresist |
摘要 |
A method and system (100) for the stripping of photoresist layers using an electrostatically shielded RF (ESRF) plasma for the reduction of a crust and then the removal of the softened photoresist in an ESRF plasma. By varying the temperature during the two steps the method and system further provides the processing parameters for the needs of the stripping reaction.
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申请公布号 |
US2002197870(A1) |
申请公布日期 |
2002.12.26 |
申请号 |
US20020204263 |
申请日期 |
2002.08.20 |
申请人 |
JOHNSON WAYNE L |
发明人 |
JOHNSON WAYNE L |
分类号 |
C23C16/458;C23C16/46;H01L21/311;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
C23C16/458 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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