发明名称 Method for locating IDDQ defects using multiple controlled collapse chip connections current measurement on an automatic tester
摘要 A method for improving the signal-to-noise ratio in an IDDQ defect test is disclosed. An integrated circuit is divided into a plurality of areas and each area is provided with and bounded by terminals. An IDDQ defect is activated to generate IDDQ defect current within the integrated circuit. An amount of IDDQ defect current generated within each area is measured at the terminals provided thereto. Based on the IDDQ current measurement on each area, an IDDQ current map is created. By analyzing the IDDQ current map, the presence and location of the defect is determined. Based on the determination, the IDDQ defect is isolated.
申请公布号 US2002196042(A1) 申请公布日期 2002.12.26
申请号 US20010681917 申请日期 2001.06.26
申请人 BUFFET PATRICK H.;HEABERLIN DOUGLAS C.;PASTEL LEAH M.P.;SUN YU H. 发明人 BUFFET PATRICK H.;HEABERLIN DOUGLAS C.;PASTEL LEAH M.P.;SUN YU H.
分类号 G01R31/28;G01R31/30;(IPC1-7):G01R31/26 主分类号 G01R31/28
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