METHOD FOR FORMING SILICON-BASED THIN FILM, SILICON-BASED THIN FILM, SEMICONDUCTOR DEVICE, AND APPARATUS FOR FORMING SILICON-BASED THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a silicon-based thin film having superior characteristics, which is formed at a high film-forming speed, a semiconductor device including it, and further a semiconductor device superior in adhesiveness and environment resistance, which employs the silicon-based thin film and is manufactured in a short tact time. SOLUTION: This method for forming the silicon-based thin film is characterized by reducing an electric potential of an applied high-frequency power by a potential V1 against a ground potential through superimposing a dc-potential to the high-frequency power, and keeping the above potential V1 in a range satisfying an expression:|V2|<=|V1|<=50×|V2|, where V2 indicates a potential difference between the earth electric potential and an electric potential generated in a substrate electrode to be in contact with ground, when generating plasma along with stopping the ground contact of the electrode and the superimposition of the dc-potential to the high-frequency power.