| 摘要 |
PROBLEM TO BE SOLVED: To attain continuous oscillation at room temperature, by decreasing the threshold of a laser device composed of a nitride semiconductor. SOLUTION: This element has an active layer, formed on the upper part of a substrate and a first p-type clad layer having ridge-like stripes formed on the active layer and an embedded layer composed of the nitride semiconductor, having a refraction index smaller than that of the active layer and the first p-type clad layer is formed on the stripe side face of that first p-type clad layer. Therefore, since an effective refraction index waveguide type laser device is provided, a threshold current is lowered and further, the laser light of a single mode can be provided.
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