发明名称 |
Method of forming variable oxide thicknesses across semiconductor chips |
摘要 |
A method for forming variable oxide thicknesses across semiconductor chips comprises providing a silicon semiconductor substrate having pre-selected areas open to silicon surface using a photoresist layer; immersing the silicon semiconductor substrate in an HF type electrolytic bath to produce a porous silicon area; and removing the photoresist layer and oxidizing the silicon semiconductor substrate to produce a plurality of thicknesses of gate oxide on the silicon semiconductor substrate.
|
申请公布号 |
US2002197836(A1) |
申请公布日期 |
2002.12.26 |
申请号 |
US20010878556 |
申请日期 |
2001.06.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
IYER S. SUNDAR KUMAR;HEGDE SURYANARAYAN G.;JONES ERIN CATHERINE;OKORN-SCHMIDT HARALD F. |
分类号 |
H01L21/8234;(IPC1-7):H01L21/320;H01L21/336;H01L21/476 |
主分类号 |
H01L21/8234 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|