METHOD OF FORMING DIELECTRIC LAYER OF CAPACITOR IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming the dielectric layer of a capacitor is provided to improve capacitance property and performance of semiconductor device. CONSTITUTION: A dielectric layer comprised of an oxide and a nitride layer is formed on a lower capacitor electrode in semiconductor device. A silicon oxide layer formed on the lower capacitor electrode and a silicon nitride layer formed on the silicon oxide layer are sequentially formed in one equipment.