发明名称 |
Semiconductor device with non-volatile memory and random access memory |
摘要 |
A non-volatile memory, an SRAM, a DRAM and a control circuit are module-formed into a single packaged. The control circuit assigns addresses to the SRAM and addresses to the DRAM and data necessary to be held for a long period of time is saved in the SRAM. Two chips of DRAM are mapped to the same address space and refreshed alternately. The plural chips are arranged such that they are mutually laminated, and they are wired by means of a BGA or inter-chip bonding.
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申请公布号 |
US2002199056(A1) |
申请公布日期 |
2002.12.26 |
申请号 |
US20020163364 |
申请日期 |
2002.06.07 |
申请人 |
HITACHI, LTD. AND HITACHI ULSI SYSTEMS CO., LTD. |
发明人 |
AYUKAWA KAZUSHIGE;MIURA SEIJI;IWAMURA TETSUYA;HOSHI KOUICHI;SAITOU YOSHIKAZU |
分类号 |
G11C11/41;G06F12/00;G06F12/06;G11C5/00;G11C11/00;G11C11/401;G11C11/406;G11C11/408;(IPC1-7):G06F12/00 |
主分类号 |
G11C11/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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