发明名称 |
Fabrication method of a semiconductor device |
摘要 |
To form a wiring electrode having excellent contact function, in covering a contact hole formed in an insulting film, a film of a wiring material comprising aluminum or including aluminum as a major component is firstly formed and on top of the film, a film having an element belonging to 12 through 15 groups as a major component is formed and by carrying out a heating treatment at 400° C. for 0.5 through 2 hr in an atmosphere including hydrogen, the wiring material is provided with fluidity and firm contact is realized.
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申请公布号 |
US2002197866(A1) |
申请公布日期 |
2002.12.26 |
申请号 |
US20020176206 |
申请日期 |
2002.06.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO. LTD., A JAPANESE CORPORATION |
发明人 |
YAMAZAKI SHUNPEI;SUZAWA HIDEOMI;FUKUCHI KUNIHIKO |
分类号 |
H01L21/28;H01L21/285;H01L21/3205;H01L21/336;H01L21/768;H01L23/52;H01L23/532;H01L29/786;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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