发明名称 Dram module and method of using sram to replace damaged dram cell
摘要 A DRAM module and a method of replacing a damaged DRAM cell in the DRAM module with a SRAM. The DRAM module has at least a non-volatile memory and a DRAM control logic circuit. In the process of replacing the damaged DRAM with the SRAM, the damaged address data is compared to DRAM address data. If the data are consistent, the address of the SRAM is used to access data. Meanwhile, the output enabling signal of the DRAM cell is turned off. It can thus assist the computer to correctly find the good DRAM cell for data access, so as to ensure a normal operation of the computer.
申请公布号 US2002196671(A1) 申请公布日期 2002.12.26
申请号 US20020179489 申请日期 2002.06.24
申请人 CHIEN PIEN 发明人 CHIEN PIEN
分类号 G11C11/408;G11C15/00;G11C29/00;(IPC1-7):G11C5/00 主分类号 G11C11/408
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