| 摘要 |
A nonvolatile memory comprises a substrate having trenches formed therein, a first dielectric layer is formed on said substrate. Protruding isolations are formed in said trenches and protruding over a surface of said substrate, thereby forming cavity between thereof. A first conductive layer is formed on said first dielectric layer and in said cavity. A second dielectric layer is formed on said second conductive layer and a second conductive layer is formed on said second dielectric layer as a control gate.
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