发明名称 Read only memory structure
摘要 An apparatus including at least one designated memory cell of a plurality of memory cells. Disposed within each designated memory cell is a resistance-altering constituent. Consequently, a first binary value is recognized in each designated cell and at least a second binary value is recognized in each remaining cell.
申请公布号 US2002196652(A1) 申请公布日期 2002.12.26
申请号 US20010888878 申请日期 2001.06.25
申请人 MILLS ALLEN PAINE 发明人 MILLS ALLEN PAINE
分类号 G11C17/00;G11C17/10;(IPC1-7):G11C17/00 主分类号 G11C17/00
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