发明名称 |
Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film |
摘要 |
There is provided a method of forming a barrier metal which is designed to be interposed between a metal layer and an insulating layer, both constituting a multi-layered structure of semiconductor device, the method comprising the steps of positioning a substrate having the insulating layer formed thereon at a predetermined position inside a processing vessel forming a processing space, and alternately introducing a gas containing a refractory metallic atom, a gas containing Si atom and a gas containing N atom into the processing vessel under a predetermined processing pressure, thereby allowing a refractory metal nitride or a refractory metal silicon nitride to be deposited on the insulating layer by way of atomic layer deposition.
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申请公布号 |
US2002197856(A1) |
申请公布日期 |
2002.12.26 |
申请号 |
US20020225228 |
申请日期 |
2002.08.22 |
申请人 |
MATSUSE KIMIHIRO;OTSUKI HAYASHI |
发明人 |
MATSUSE KIMIHIRO;OTSUKI HAYASHI |
分类号 |
H01L21/28;H01L21/285;H01L21/768;H01L23/532;H01L29/49;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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