发明名称 |
Methods of fabricating read only memory devices including thermally oxidized transistor sidewalls, and devices so fabricated |
摘要 |
A ROM device is fabricated by forming a first conductive layer pattern including a sidewall, on an insulating layer on an integrated circuit substrate. Ions are implanted into the integrated circuit substrate using the first conductive layer pattern as an implantation mask. At least a portion of the integrated circuit substrate, and at least a portion of the sidewall are thermally oxidized, to form a thermal oxide layer on at least a portion of the integrated circuit substrate and on the sidewall, and to form a buried doping layer from the implanted ions beneath the thermal oxide layer. A second conductive layer pattern is then formed on at least a portion of the thermal oxide layer and on at least a portion of the first conductive layer pattern.
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申请公布号 |
US2002197799(A1) |
申请公布日期 |
2002.12.26 |
申请号 |
US20020085369 |
申请日期 |
2002.02.28 |
申请人 |
LEE HEE-JUENG;YOON KI-CHANG |
发明人 |
LEE HEE-JUENG;YOON KI-CHANG |
分类号 |
H01L21/28;H01L21/336;H01L21/8246;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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