| 摘要 |
PURPOSE: Provided is a method for detecting an optimized focus of an exposure device used in the manufacture of semiconductor devices by using the variation of line widths in the pattern of a photosensitized layer depending on focusing. CONSTITUTION: The method for detecting an optimized focus of an exposure device comprises the steps of: providing a reticle, in which chrome patterns are formed at the inner box(20) and outer box(10) in the left bottom or right top, and at the space(30) between the inner box(20) and the outer box(10) in the right top or left bottom, when taken from a diagonal line crossing over the X-axis and Y-axis; forming a pattern of a photosensitized layer while varying a focus by using the reticle; measuring the distance(a) of the space between the outer box(10) and the inner box(20) and the line width(b) of the pattern of the photosensitized layer formed at the zone of the space(30) to detect an optimized focus.
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