METHOD FOR MANUFACTURING SILICON-BASED THIN FILM, SILICON- BASED THIN FILM, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a silicon-based thin film in a few manufacturing steps, which forms a conductive layer with low activation energy superior as a window layer of little light-absorption, and to provide a semiconductor device with superior characteristics, having high open voltage, high absorption efficiency for visible light, and a low interfacial level in an interfacial region between a conductive type layer and an i-type semiconductor layer. SOLUTION: This method for forming the silicon-based thin film is characterized by making a floating potential of a high-frequency introducing part 247 negative against a ground potential, and controlling the potential of the high-frequency introducing part 247 so as to be greater than the floating potential, when applying high frequency 257 to the high-frequency introducing part 247.