| 摘要 |
PROBLEM TO BE SOLVED: To realize a batch type heat-treating apparatus which can simply modify the in-plane uniformity of the thicknesses of films on the surfaces of members to be treated. SOLUTION: A batch type heat-treating apparatus is provided with at least a heating furnace main body 1, heating means 5 provided within the main body 1, a reaction container 2 which is housed within the main body 1 and houses a wafer boat 6 with members W to be treated placed in its interior, a nozzle 13 for feeding source gas within the container 2, and an exhaust port 15 for exhausting product gas produced as the result of the reaction with the source gas within the container 2. A semiconductor processor is provided with a reaction suppressing gas feed nozzle 14 formed with a plurality of holes for feeding gas to suppress the film-forming reaction of the source gas from the lower part of the container 2. The processor is used and reaction inbibiting gas is made to unevenly distribute on the peripheral part of a semiconductor substrate to be treated, whereby a film formation on the peripheral part of the semiconductor substrate is suppressed to raise the in-plane uniformity of the thicknesses of films on the surfaces of the members W to be treated.
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