| 发明名称 |
Semiconductor light emitting device |
| 摘要 |
A semiconductor light emitting device is disclosed in which a semiconductor multilayer structure including a light emitting layer is formed on a substrate and light is output from the opposite surface of the semiconductor multilayer structure from the substrate. The light output surface is formed with a large number of protrusions in the form of cones or pyramids. To increase the light output efficiency, the angle between the side of each protrusion and the light output surface is set to between 30 and 70 degrees.
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| 申请公布号 |
US2002195609(A1) |
申请公布日期 |
2002.12.26 |
| 申请号 |
US20020178714 |
申请日期 |
2002.06.25 |
| 申请人 |
YOSHITAKE SHUNJI;SEKIGUCHI HIDEKI;YAMASHITA ATSUKO;TAKIMOTO KAZUHIRO;TAKAHASHI KOICHI |
发明人 |
YOSHITAKE SHUNJI;SEKIGUCHI HIDEKI;YAMASHITA ATSUKO;TAKIMOTO KAZUHIRO;TAKAHASHI KOICHI |
| 分类号 |
H01L33/20;H01L33/22;H01L33/38;H01L33/44;(IPC1-7):H01L29/06;H01L31/032;H01L31/033;H01L27/15;H01L31/12;H01L29/74 |
主分类号 |
H01L33/20 |
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