| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive diode exhibiting excellent total balance of ESD resistance, reverse surge resistance, forward voltage drop VF characteristics, reverse breakdown voltage characteristics, and the like. SOLUTION: In the method for fabricating a diode, (1) lower limit of the specific resistanceρin an intermediate semiconductor region is set at a value derived from the relation between a desired reverse breakdown voltage and the breakdown voltage VBO- CY of single side step cylindrical junction, (2) thickness Wi of the intermediate semiconductor region is set in such a range as a relation of (1-WN/Wi )=0.29 to 0.32 is satisfied, where WN is the width of a depletion layer in the intermediate semiconductor region when a breakdown voltage VBO- PL of single side step planar junction is applied, (3) upper limit of the product of the specific resistanceρand the thickness Wi is set such that the forward voltage drop VF does not exceed a desired level, and (4) calculation is performed while taking account of the depth Xjp and the surface concentration Csp of a second semiconductor region, a breakdown voltage sustaining structure (mesa/planar), and the reverse surge resistance characteristics.
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