发明名称 |
HIGH MOBILITY FETS USING AL2O3 AS A GATE OXIDE |
摘要 |
A method of forming a high-k dielectric material which exhibits a substantially lower amount of trap charge within a gate stack region is provided. The method maintains high-temperatures (250° C. or above) such that the substrate wafer is not cooled during the various processing steps. Such a method leads to the formation of a high-k dielectric material which does not exhibit a hysteric behavior in a capacitance-voltage curve as well as an increased mobility on FETs using conventional CMOS processing.
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申请公布号 |
US2002197789(A1) |
申请公布日期 |
2002.12.26 |
申请号 |
US20010888777 |
申请日期 |
2001.06.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BUCHANAN DOUGLAS A.;CALLEGARI ALESSANDRO C.;GRIBELYUK MICHAEL A.;JAMISON PAUL C.;NEUMAYER DEBORAH ANN |
分类号 |
H01L21/28;H01L21/316;H01L29/51;(IPC1-7):H01L21/824;H01L21/336;H01L21/469 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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