发明名称 |
Process for low temperature atomic layer deposition of Rh |
摘要 |
A method for the formation of rhodium films with good step coverage is disclosed. Rhodium films are formed by a low temperature atomic layer deposition technique using a first gas of rhodium group metal precursor followed by an oxygen exposure. The invention provides, therefore, a method for forming smooth and continuous rhodium films which also have good step coverage and a reduced carbon content.
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申请公布号 |
US2002197814(A1) |
申请公布日期 |
2002.12.26 |
申请号 |
US20010884997 |
申请日期 |
2001.06.21 |
申请人 |
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发明人 |
MARSH EUGENE P.;UHLENBROCK STEFAN |
分类号 |
C23C16/04;C23C16/18;C23C16/44;C23C16/455;H01L21/02;H01L27/108;(IPC1-7):H01L21/20;H01L21/824 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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