Apparatus for fabricating semiconductor structures and method of forming the same

摘要

An apparatus for forming a semiconductor structure is provided. The apparatus includes a chamber and a plurality of first material sources positioned at least partially within the chamber. The plurality of first material sources are configured to provide materials for the formation of a monocrystalline accommodating buffer layer on a substrate. The plurality of first material sources includes an oxygen source. At least one second material source is also positioned at least partially within the chamber and is configured to provide material for the formation of a monocrystalline oxygen-doped material layer overlying the monocrystalline accommodating buffer layer. The apparatus also includes an oxygen-adjustment mechanism configured to adjust the partial pressure of oxygen in the chamber.