发明名称 Chemical mechanical polishing slurry and process for ruthenium films
摘要 A CMP slurry for ruthenium and a polishing process using the same. In a process technology below 0.1 mum, when a capacitor using a (Ba1-xSrx)TiO3 film as a dielectric film is fabricated, the slurry is used to polish a ruthenium film deposited as a lower electrode according to a CMP process. The CMP process is performed by using the slurry, to improve a polishing speed of ruthenium under a low polishing pressure. In addition, the CMP process is performed according to an one-step process by using one kind of slurry. As a result, defects on an insulating film are reduced and a polishing property is improved, thereby simplifying the CMP process.
申请公布号 US2002197855(A1) 申请公布日期 2002.12.26
申请号 US20020038375 申请日期 2002.01.04
申请人 KIM JAE HONG;LEE SANG ICK 发明人 KIM JAE HONG;LEE SANG ICK
分类号 B24B37/00;C09G1/02;C09K3/14;C23F3/00;H01L21/02;H01L21/304;H01L21/3205;H01L21/321;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L21/476 主分类号 B24B37/00
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