| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device affected by temperature variation or humidity and exhibiting excellent durability and reliability of connection with an external substrate, and a method for manufacturing such a semiconductor device at a low cost. SOLUTION: The semiconductor device comprises a semiconductor element 3 having a semiconductor element region 1 formed on the major surface and first bonding pads 2 formed on the outer circumferential part of the semiconductor element region 1, a first insulating film 4 covering the major surface entirely except a part of the first bonding pads 2, a wiring 5 having one end connected with the first bonding pads 2 and the other end arranged on the first insulating film 4, second bonding pads 6 formed integrally with the wiring 5 on the first insulating film 4, a second insulating film 7 covering the major surface entirely except a part of the second bonding pads 6, and bump electrodes 8 formed on the second bonding pads 6. The second insulating film 7 also covers a part of the second bonding pads 6, and the circumferential edge of an opening 7a made in the second insulating film 7 adheres to the circumferential surface of the bump electrode 8.
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