| 摘要 |
PROBLEM TO BE SOLVED: To provide a multibeam semiconductor laser device, which can be produced easily, is provided with a configuration for easy diversification and further can be applied to a GaN semiconductor laser device. SOLUTION: A multibeam semiconductor laser device 10 is composed of semiconductor laser elements 12A and 12B and a submount 14 for mounting the semiconductor laser elements. Each of semiconductor laser elements is provided with a laser stripe 18 on a mesa 16 and has a p-side electrode 20, on a ridge stripe and an n-side electrode 22 on a contact layer by the side of the mesa. A submount is provided with a first junction electrode 24 to be bonded with the p-side electrode 20, while being mutually electrically insulated and a second junction electrode 26 to be bonded with the n-side electrode 22 on a jointing surface 14a with the semiconductor laser elements. The first junction electrode 24 and the second junction electrode 26 are formed from an Al wiring layer and a solder layer. The multi-beam semiconductor laser element provided with a plurality of laser stripes can be formed by bonding the p-side electrode and the first junction electrode, bonding the n-side electrode and the second junction electrode and mounting the semiconductor laser elements on the submount by a junction-down system.
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