| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of growing a gallium nitride single crystal which can take oxygen within the crystal as an N-type dopant. SOLUTION: In a method of growing a gallium nitride crystal, a seed crystal having a face other than a C-face on the surface (upper surface) is used and, while a gallium raw material, a nitrogen raw material and raw gas containing oxygen to be doped are fed to the seed crystal, and the gallium nitride crystal is vapor-grown while keeping the surface other than the C-face. Thus the oxygen is doped within the gallium nitride crystal through the surface. Or a seed crystal having a C-face on the surface is used and, while a gallium raw material, a nitrogen raw material and raw gas containing oxygen to be doped are fed to the seed crystal, a facet-face other than the C-face is generated on the surface of the seed crystal and a gallium nitride crystal is vapor-grown in the C-axis direction of the seed crystal while keeping the facet-face, whereby the oxygen is doped within the gallium nitride crystal through the facet-face.
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