Method of forming a memory device

摘要

Applications and methods for DRAM technology compatible non-volatile memory cells are presented. An example illustrating the applications and methods includes a circuit switch. The circuit switch has a non-volatile memory cell which a metal oxide semiconductor field effect transistor (MOSFET) formed in a semiconductor substrate, a capacitor, and a vertical electrical via coupling a bottom plate of the capacitor through an insulator layer to a gate of MOSFET. A wordline is coupled to a top plate of the capacitor in the non-volatile memory cell. A sourceline is coupled to a source region of the MOSFET in the non-volatile memory cell. A bit line is coupled to a drain region of the MOSFET in the non-volatile memory cell and coupled to a logic/select circuit.