发明名称 |
Field emission-type electron source and manufacturing method thereof |
摘要 |
A field emission-type electron source (10) is provided with a conductive substrate (1), a semiconductor layer formed on a surface of the conductive substrate (1), at least a part of the semiconductor layer being made porous, and a conductive thin film (7) formed on the semiconductor layer. Electrons injected into the conductive substrate (1) are emitted from the conductive thin film (7) through the semiconductor layer by applying a voltage between the conductive thin film (7) and the conductive substrate (1) in such a manner that the conductive thin film (7) acts as a positive electrode against the conductive substrate (1). The semiconductor layer includes a porous semiconductor layer (6) in which columnar structures (21) and porous structures (25) composed of fine semiconductor crystals of nanometer scale coexist, a surface of each of the structures being covered with an insulating film (22,24). Further, an average dimension of each of the porous structures (25) in a thickness direction of the semiconductor layer is smaller than or equal to 2 mum.
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申请公布号 |
US6498426(B1) |
申请公布日期 |
2002.12.24 |
申请号 |
US20000557916 |
申请日期 |
2000.04.21 |
申请人 |
MATSUSHITA ELECTRIC WORKS, LTD. |
发明人 |
WATABE YOSHIFUMI;KONDO YUKIHIRO;AIZAWA KOICHI;KOMODA TAKUYA;HONDA YOSHIAKI;HATAI TAKASHI;ICHIHARA TSUTOMU;KOSHIDA NOBUYOSHI |
分类号 |
H01J31/12;H01J1/304;H01J1/312;H01J9/02;(IPC1-7):H01J1/00;H01J1/05;H01J1/14;H01J19/06;H01J9/04 |
主分类号 |
H01J31/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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