Coupled-well structure for transport channel in field effect transistors

摘要

Two or more coupled sub-wells are inserted in the quantum well region of a MODFET to move the electron/hole gas away from the interface between the spacer layer and the well region. The channel can be constructed with a wire cross-section to confine the electron/hole gas in two dimensions, thereby reducing the scattering and improving the device performance. Structures with supply layer contacts, along with their application are described. Laterally coupled quantum wire MODFETs are also disclosed. The insertion of a coupled-well transport channel is applicable for Si MOSFETs in improving the high frequency performance.