Method for planarizing a semiconductor device using ceria-based slurry

摘要

A chemical mechanical polishing (CMP) process employs a ceria-based slurry as an abrasive. In particular, a nitride pattern is formed over a semiconductor substrate, and an oxide layer is then formed over the semiconductor substrate and the nitride pattern. Next, a sacrificial insulation layer which is devoid of surface steps is formed over the oxide layer. The sacrificial insulation layer and the oxide layer are then polished by CMP using the ceria-based slurry and using the nitride pattern as a stopper.