| 摘要 |
A number of booster circuits to be operated out of a plurality of booster circuits are selected in accordance with a level of the boosted voltage to be provided at a common voltage output terminal of the plurality of booster circuits. With such an arrangement, fluctuations in the output voltage that can appear when a light load is applied to the voltage output terminal of the booster circuits can be effectively reduced to make the semiconductor memory device driven by the power supply circuit operate reliably. Further, one of the output terminals of intermediate voltage booster circuits is connected to the output terminal of a high voltage booster circuit. Then, a desired voltage can be obtained from the booster circuits that are implemented without using costly transistors to reduce the chip cost.
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