Process for producing semiconductor device

摘要

A process for producing a semiconductor device including plural element forming regions having different element region widths W and element isolating regions between said element forming regions. The process includes forming trenches on a semiconductor substrate having previously accumulated thereon a first dielectric film for forming isolating regions;accumulating a second dielectric film having a thickness t on the semiconductor substrate to fill in trenches;removing part of the second dielectric film on element forming regions that have an element regions width W satisfying the following equation:wherein theta represents a accumulation angle of said second dielectric film on said element forming region; andpolishing the second dielectric film.