发明名称 Method and apparatus for achieving uniform low dark current with CMOS photodiodes
摘要 An apparatus and method for achieving uniform low dark currents with CMOS photodiodes. A threshold voltage of a reset FET is set to an appropriate value such that the dark current from a photodiode is actively removed through the reset FET during signal integration. This reduces the dark current by over 3 orders of magnitude as compared to conventional active pixel sensors, without requiring pinned photodiodes.
申请公布号 US6498331(B1) 申请公布日期 2002.12.24
申请号 US19990468696 申请日期 1999.12.21
申请人 PICTOS TECHNOLOGIES, INC. 发明人 KOZLOWSKI LESTER J.;MANN RICHARD A.
分类号 H01L27/146;H01L31/10;H04N5/335;(IPC1-7):H01L27/00 主分类号 H01L27/146
代理机构 代理人
主权项
地址