发明名称 |
Method and apparatus for achieving uniform low dark current with CMOS photodiodes |
摘要 |
An apparatus and method for achieving uniform low dark currents with CMOS photodiodes. A threshold voltage of a reset FET is set to an appropriate value such that the dark current from a photodiode is actively removed through the reset FET during signal integration. This reduces the dark current by over 3 orders of magnitude as compared to conventional active pixel sensors, without requiring pinned photodiodes.
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申请公布号 |
US6498331(B1) |
申请公布日期 |
2002.12.24 |
申请号 |
US19990468696 |
申请日期 |
1999.12.21 |
申请人 |
PICTOS TECHNOLOGIES, INC. |
发明人 |
KOZLOWSKI LESTER J.;MANN RICHARD A. |
分类号 |
H01L27/146;H01L31/10;H04N5/335;(IPC1-7):H01L27/00 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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