| 摘要 |
AIIIBV compounds (other than boron phosphide) are produced in crystalline form by placing a quantity of starting material, which comprises either the AIIIBV compound or that component of the compound which belongs to IIIrd group of the Periodic Table in elemental form, in the first region of a reaction chamber, and vapour comprising that component of the compound which belongs to the Vth group of the Periodic Table in elemental form is brought into contact with it and a resulting vapour passes from the first region to a second region when the desired compound is precipitated from the vapour phase, the temperature of said first region during contact and precipitation being higher than that of the second region. The Group III elements specified are Al, Ga, In or B and the Group V elements P, As or Sb. Minimum temperatures and preferred temperatures for the first region, the temperature difference between the regions, and the preferred temperatures of the second region are given for the materials AlP, GaP, InP, BAs, AlAs, GaAs, InAs, AlSb, GaSb and InSb. The reaction chamber may be open at both ends, closed at one end and open at the other, or completely closed. The vapour of the Group V element can be passed through the chamber with an inert carrier gas, or a source of the Group V element vapour may be disposed between the closed end and the first region, the end of the vessel containing said source being heated to produce the vapour, i.e. in this case the tube has three regions of temperature. The vapour may be drawn from the reaction tube by a pumping device or by a cooling device which condenses the vapour situated beyond the open end of the tube. Minimum desirable vapour pressures of phosphorus, arsenic and antimony in the reaction tube are given. A body of the material to be formed or a different material may be placed in the second region to act as a support for the deposited material.
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