| 摘要 |
A method of preparing slices of semiconductor material, having a first type of conductivity, which slice has discrete doped regions, is disclosed. The method consists of preparing or selecting a block of semiconductive material having at least one first region of the first conductivity type and at least one second region of a different conductivity which is more rapidly electroetched than the first conductivity type region. The block is exposed to an ion implantation source which implants suitable ions in at least one discrete portion of the first region. The ion-implanted block is then subjected to an electroetching treatment whereby the second region is selectively etched thereby resulting in the formation of a slice of the first conductivity type material, having suitable ions implanted therein. The slice is then subjected to an annealing or heat treatment whereby the implanted ions are activated resulting in a slice having discrete regions having different conductivity.
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