发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A MISFET is provided with a segmented channel comprising regions in which the channel is inverted by a first gate voltage and regions in which the channel is inverted by a second gate voltage. The MISFET is formed in a semiconductor substrate having a first conductivity type and the first inversion region of the channel has a first impurity concentration determined by the surface concentration of the substrate. The second inversion region of the channel has a second impurity concentration determined by doping an impurity to the region selected by a photolithographic process. The first and second inversion regions may be divided into a plurality of plane shapes and the threshold voltage of the MISFET is set to a desired value in accordance with the plane area ratio of the first and second inversion regions.
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申请公布号 |
US6498376(B1) |
申请公布日期 |
2002.12.24 |
申请号 |
US19950459831 |
申请日期 |
1995.06.02 |
申请人 |
SEIKO INSTRUMENTS INC |
发明人 |
MIYAGI MASANORI;KONISHI HARUO;KUBO KAZUAKI;KOJIMA YOSHIKAZU;SHIMIZU TORU;SAITOH YUTAKA;MACHIDA TORU;KANEKO TETSUYA |
分类号 |
H01L21/322;H01L21/336;H01L21/8234;H01L27/07;H01L29/10;H01L29/786;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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