| 摘要 |
PROBLEM TO BE SOLVED: To lay separate circuit elements of a semiconductor device and wirings on an upper layer, without giving the potential influence on lower layer circuit elements through capacitance coupling. SOLUTION: A shielding electrode 32 connected to ground is disposed between a capacitor 8 formed on a silicon substrate 1 and a thin film resistance 13 formed so as to overlap with a capacitor 8 forming region. |
