| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which efficiency of relieving defect can be improved by enabling replacing a defective normal word line by a redundant word line having other decoding signal. SOLUTION: A semiconductor memory device comprises a selecting circuit 32 varying selectively an order by which an address is mapped in a row of normal and redundant memory cells. A row of a normal memory cell comprising a memory cell in which defect is caused can be substituted by a useful row of a redundant memory cell having no defect by controlling operation of such the selection circuit 32 without connecting a row of a redundant memory cell and a row of a normal memory cell substituted generally.
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