COMPOSITE INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To realize practical use of an oxide thin film by growing the oxide thin film with superior crystallinity on a silicon substrate and increasing the degree of freedom for selecting the substrate. SOLUTION: A MOS circuit and a thin film capacitor are individually formed, and two substrates are bonded with epoxy resin and wired with a buried wiring member 10 like Poly-Si to constitute a composite circuit package. In this case, an Si (110) substrate with plane orientation different from an IC-side substrate 100 is used as the second substrate 1a. A dielectric layer 3 is formed by sputtering and the like on the Si (110) substrate with termination treatment. After the dielectric layer 3 is formed, an upper electrode 4 is formed, and then a thin film coil 7 is formed on the upper electrode 4. The space among the coil conductors and the upper space are filled with insulating magnetic gel 9 and molded with a molding layer 14. Then, the buried wiring 10 is jointed to the center of the coil to finish the thin-film coil 7 and the composite integrated circuit.