| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which has little variation of characteristics, depending on the area of the emitter for a plurality of bipolar transistors. SOLUTION: A first to third insulation films 41-43, laminated on a semiconductor layer 24a serving as a base, have openings 26 for emitters, the first and third films 41, 43 are different from the second film 42, with respect to etching characteristics, and the third film 43 is thicker than the first and second films 41, 42. For forming the openings 26, the third film 43 can be etched with the second film 42 used as an etching stopper, and the etching quantity hardly varies due to the microloading effect.
|
