| 摘要 |
PROBLEM TO BE SOLVED: To suppress metallic contamination. SOLUTION: A rotary disc 20 is accommodated in a treatment chamber 16 evacuated to a vacuum, a plurality of wafer holders 28 are fixed to a ring 24 of the rotary disc 20, and a silicon wafer 30 is held by each wafer holder 28. In the process of rotating the silicon wafer 30 along with the rotation of the rotary disc 20, the silicon wafer 30 is heated with a lamp heater 32, and also an ion beam drawn our of an ion source 10 is applied to the silicon wafer 30. At this time, heat energy by the application of the ion beam is raised, and heat energy by the heating of the lamp heater 32 is lowered, thereby restraining generation of metals from the lamp heater 32 during ion implantation.
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