SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD, AND PORTABLE INFORMATION EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device, having a channel region made of a polycrystalline semiconductor having a small off-leakage and a small unevenness of the off-leakage at each element. SOLUTION: A TFT is formed on an insulating board 1. The channel region of the TFT is made of a polycrystalline silicon. A thickness of this channel region is 5 nm or less, and the width of the channel region is 0.3 μm or less. As a result, off-leakage of the TFT can be suppressed to be very small, and the unevenness of the TFT can be suppressed.