| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device, by which the gate structure can be made as per design dimensions. SOLUTION: Silicon oxide films 14a and 14b are formed by patterning a silicon oxide film after forming a silicon oxide film 4, a polysilicon film 5, and the silicon oxide film 6 in this order on a silicon substrate 1. Next, after application of photoresist 15, the photoresist 15 is exposed to light using a photomask 18. The photomask 18 is a photomask for defining each end of gate structures 25i-25j in the gate width direction. Next, openings 21s-21u are formed by developing the photoresist 15. Next, using the photoresist 15 as an etching mask, the silicon oxide films 14a and 14b at the sections exposed in the openings 21s-21u are removed by etching. |
