METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To improve chemical stability on a silicon nitrogen film. SOLUTION: After an insulating film as a silicon nitride film is subjected to plasma CVD film depositing, introduction of a silane gas is stopped, the film is subjected to plasma discharging for a predetermined time while a nitrogen gas and an ammonia gas are introduced, and then the plasma discharging is stopped. Thereby non-reacted formation on the silicon nitride film can be nitrified and thus a disadvantage caused by the non-reacted formation can be prevented.