发明名称 CIRCUIT AND METHOD FOR PREVENTING ERRONEOUS ERASURE AND ERRONEOUS WRITING OF NON-VOLATILE MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To prevent the erroneous erasure and erroneous writing of a non- volatile memory. SOLUTION: This circuit or system having a non-volatile memory reloadable for each memory block is provided with a protection area (address) designating part, a protection release signal deciding part, and a #WE(write enable) control deciding part so that the erroneous erasure or erroneous writing of non-volatile memory data due to the malfunction of a program can be prevented by controlling a #WE(write enable) signal to the non-volatile memory. Therefore, even at the time of performing erasure or writing to a protection area in a protection non-releasing state, the #WE control is suppressed so that it is possible to prevent the erroneous erasure or erroneous writing of the protection area due to the malfunction of the program.</p>
申请公布号 JP2002366436(A) 申请公布日期 2002.12.20
申请号 JP20010168947 申请日期 2001.06.05
申请人 HITACHI LTD 发明人 SAITO TOSHIYUKI;FUKUSHIGE TATSUHIRO;OTA SHINYA
分类号 G06F12/14;G06F21/02;G11C16/02;(IPC1-7):G06F12/14 主分类号 G06F12/14
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