发明名称 NONVOLATILE MEMORY AND ITS REWRITING CONTROL METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a device and method for especially shortening an apparent rewriting time in a nonvolatile memory equipped with a flash memory or a flash memory chip. SOLUTION: Deletion unit sectors arranged in the number corresponding to the number of logical address spaces, and those sectors are allocated with individual logical sector addresses, and provided with a plurality of additional sectors. Each sector is provided with a data part 102 for preserving data and a control data part 101 for preserving control data for controlling deletion and rewriting. At the time of updating the data of the sector of one logical sector address, the sector of a physical sector address corresponding to one logical sector address is deleted, and data to be updated are written in the already deleted and available additional sector. The deletion of the sector and the writing of data in the additional sector are performed in parallel, and one logical sector address is allocated to one additional sector, and the deleted sector is managed as a new additional sector.</p>
申请公布号 JP2002366420(A) 申请公布日期 2002.12.20
申请号 JP20010174517 申请日期 2001.06.08
申请人 NEC CORP 发明人 SAITO KENJI;NISHISAKA TEIICHIRO
分类号 G11C16/02;G06F12/00;G06F12/02;(IPC1-7):G06F12/00 主分类号 G11C16/02
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