发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To reduce current consumption in a semiconductor integrated circuit using a fine MOS transistor. SOLUTION: While both first and second MOS transistors are turned off (T1=VC and I1=VC), a voltage between the gate and source of the first MOS transistor is the inverse polarity of a voltage between the gate and source of the first MOS transistor while the first MOS transistor is turned on. Therefore, the first MOS transistor is turned into strong OFF state and a sub- threshold current is remarkably decreased.
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申请公布号 |
JP2002368598(A) |
申请公布日期 |
2002.12.20 |
申请号 |
JP20020162282 |
申请日期 |
2002.06.04 |
申请人 |
HITACHI LTD;HITACHI DEVICE ENG CO LTD |
发明人 |
KAWAHARA TAKAYUKI;KAWAJIRI YOSHIKI;AKIBA TAKESADA;HORIGUCHI SHINJI;WATABE TAKAO;KITSUKAWA GORO;KAWASE YASUSHI;TACHIBANA RIICHI;AOKI MASAKAZU |
分类号 |
H03K19/00;G11C11/407;(IPC1-7):H03K19/00 |
主分类号 |
H03K19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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