METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride semiconductor element by which the end face of a resonator of a GaN-based semiconductor laser can be stably formed. SOLUTION: This method for manufacturing a nitride semiconductor element is used for forming the end face of a resonator by dry etching. Furthermore, the end face thereof is smoothened by wet etching to form a more appropriate end face.