| 摘要 |
The CMOS integrated circuit comprises a semiconductor substrate (1) with a first type of conductivity, and a casing (2) of a second type of retrograde-doped conductivity. Inter-casing insulating regions (4) are provided, separating active elements and reducing parasitic effects between vertical elements. The CMOS integrated circuit comprises a semiconductor substrate (1) with a first type of conductivity, and a casing (2) of a second type of retrograde-doped conductivity. The end of the casing is covered by an inter-casing insulating region (4). The components contained in the casing are separated from each other by means of intra-casing insulating regions (6,7). The first insulating elements (15) of the second type of high level doping conductivity extend under each intra-casing insulating region. A second region (21) of the second type of high level doping conductivity partially extends under the inter-casing insulator beyond the periphery of each casing. |
